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| 2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTORS s APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 1 2 TO-220 DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEX V CEO V EBO IC IB P tot T stg Tj Parameter 2N6107 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE = 100 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c = 25 C Storage Temperature Max. Operating Junction Temperature o Value 2N6111 40 40 30 5 7 3 40 -65 to 150 150 80 80 70 Unit V V V V A A W o o C C For PNP devices voltage and current values are negative June 1997 1/4 2N6107/2N6111 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX Parameter Collector Cut-off Current (V BE = - 1.5V) for for TC for for Test Conditions 2N6107 2N6111 o = 150 C 2N6107 2N6111 V CE = 80 V V CE = 40 V V CE = 70 V V CE = 30 V V CE = 60 V V CE = 20 V Min. Typ. Max. 0.1 0.1 2 2 1 1 1 Unit mA mA mA mA mA mA mA I CEO I EBO Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) for 2N6107 for 2N6111 V EB = 5 V I C = 0.1 A for 2N6107 for 2N6111 I C = 0.1 A for 2N6107 for 2N6111 IC = 3 A IC = 2 A IC = 7 A IC = 3 A IC = 2 A IC = 7 A IC = 3 A IC = 2 A IC = 7 A I C = 0.5 A I C = 0.5 A V CB = 10 V I B = 0.3 A I B = 0.2 A I B = 3.0 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V CEO(sus) Collector-emitter Sustaining Voltage V CER(sus) Collector-emitter Sustaining Voltage V CE(sat) Collector-emitter Saturation Voltage Base-emitter Voltage 70 30 R BE = 100 80 40 for 2N6107 for 2N6111 for 2N6107 for 2N6111 for 2N6107 for 2N6111 f = 50 KHz V CE = 4 V f = 1 MHz 30 30 2.3 20 4 250 1 1 3.5 1.5 1.5 3 150 150 V V V V V V V V V V V BE(on) h FE DC Current Gain hfe fT C cbo Small Signal Current Gain Transition-Frequency Collector-base Capacitance MHz pF Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. For PNP types voltage and current values are negative. For characteristic curves see the bd534 (PNP) series. 2/4 2N6107/2N6111 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 3/4 2N6107/2N6111 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
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